PART |
Description |
Maker |
BAL99LT1 ON0111 |
JT 22C 22#22D PIN WALL RECP SILICON, SIGNAL DIODE, TO-236AB CASE 318-08/ STYLE 18 SOT-23 (TO-236AB) CASE 318-08, STYLE 18 SOT-23 (TO-236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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BSS123LT1 BSS123LT1_D ON0223 |
TMOS FET Transistor(N-Channel) CASE 318-08, STYLE 21 SOT-23 (TO?36AB) From old datasheet system
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Motorola Inc Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
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2N7002LT1 ON0106 |
CASE 318-08, STYLE 21 SOT-23 (TO-236AB) 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB From old datasheet system
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] http://
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DTA143EE DTA143EE_D ON0279 |
Bias Resistor Transistor CASE 463-01, STYLE 1 SOT-416/SC-90 CASE 463-1, STYLE 1 SOT-16/SC-0 From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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BC847AWT1 BC847BWT1 BC847CWT1 BC848BWT1 BC846BWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR CASE 419-02/ STYLE 3 SOT-323/SC-70
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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BCW68GLT1 BCW68OLT1 ON0179 |
General Purpose Transistor CASE 318-08,STYLE6 SOT-23(TO-236AB) From old datasheet system
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Motorola Inc ON Semi MOTOROLA[Motorola, Inc]
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BAS16WT1 ON0115 |
CASE 419-02, STYLE 2 SC-70/SOT-323 From old datasheet system
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Motorola, Inc. MOTOROLA[Motorola, Inc]
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BAT54WT1 ON0130 |
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE From old datasheet system CASE 419?2, STYLE 2 SOT-23 (SC-0)
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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2N5460 2N5462 ON0061 2N5461 2N5460THRU2N5462 MOTOR |
JFET Amplifier P-Channel From old datasheet system CASE 29-4, STYLE 7TO-2 (TO-26AA) CASE 2904, STYLE 7 TO92 (TO226AA) 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
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ON Semiconductor MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola, Inc. Motorola Mobility Holdings, Inc.
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PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
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MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
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BAS16LT1 ON0114 |
CASE 31808, STYLE 8 SOT23 (TO236AB) SILICON, SIGNAL DIODE, TO-236AB CASE 31808/ STYLE 8 SOT23 (TO236AB) From old datasheet system
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Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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